http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-463302-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9ae7a59bc6bd4279183269697d7dcd1 |
| publicationDate | 2001-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-463302-B |
| titleOfInvention | Interconnection processing method of dual damascene dielectric layer |
| abstract | A self-aligned dual damascene processing method is disclosed, which comprises the following steps: forming a silicon dioxide layer, a first organic SOG layer, a first inorganic dielectric layer and a silicon nitride layer sequentially on a substrate with at least a conducting wire, and transferring the pattern to the silicon nitride layer by a photoresist pattern with a via hole defined; removing the photoresist mask, wherein the inorganic dielectric layer can block the damage of the first organic SOG layer by the oxygen-containing plasma; then, forming a second organic SOG layer and a second inorganic dielectric layer, and a silicon nitride layer; next, forming a photoresist pattern with preset plural conducting wire trenches, which is etched to transfer the pattern to the silicon nitride layer; removing the photoresist pattern, wherein the second inorganic dielectric layer can block the damage of the second organic SOG layer by the oxygen-containing plasma; performing non-isotropic etching by using the patterned silicon nitride layer as the mask, and the silicon nitride layer and the conducting wire as the etch stop layer; then depositing the barrier layer, filling a metal layer into the formed via hole and conducting wire trenches; finally, performing the chemical-mechanical polishing process. |
| priorityDate | 1999-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.