| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76259
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
1999-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbf3615ba5f0eb07d4b30c10c7b7a26a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3b140bb3a9bb5712c6beb61a3e6e4d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4b9b6b41d14e456990a425a42d30b7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb5226503df99d9dbfe0f4f039c2e801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b24458f238d614f3ed111313c1cc10b |
| publicationDate |
2001-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-463223-B |
| titleOfInvention |
Method of manufacturing semiconductor wafer method of using and utilizing the same |
| abstract |
A process for manufacturing a semiconductor wafer which has superior suitability for mass production and reproducibility. The process comprises the steps of preparing a first member which has a monocrystalline semiconductor layer on a semiconductor substrate with a separation layer arranged therebetween with a semiconductor wafer as the raw material, transferring the monocrystalline semiconductor layer onto a second member which comprises a semiconductor wafer after separating the monocrystalline semiconductor layer through the separation layer, and smoothing the surface of the semiconductor substrate after the transferring step so as to be used as a semiconductor wafer for purposes other than forming the first and second members. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I754161-B |
| priorityDate |
1998-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |