| abstract |
A coating of liquid precursor containing a metal is applied to a first electrode (122), baked on a hot plate in oxygen ambient at a temperature not exceeding 300 DEG C for five minutes, then RTP annealed at 675 DEG C for 30 seconds. The coating is then annealed in oxygen or nitrogen ambient at 700 DEG C for one hour to form a thin film of layered superlattice material (124) with a thickness not exceeding 90 nm. A second electrode (126) is applied to form a capacitor (128), and a post-anneal is performed in oxygen or nitrogen ambient at a temperature not exceeding 700 DEG C. if the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8 ≤ u ≤ 1.0, 2.0 ≤ v ≤ 2.3, and 1.9 ≤ w ≤ 2.1. |