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filingDate 2000-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37b50f31aa56819b6c9331379170fb44
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publicationDate 2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-460975-B
titleOfInvention Treating device, vacuum exhaust system for treating device, evacuating CVD device, vacuum exhaust system for evacuating CVD device, and trapping device
abstract The purpose of the present invention is to ensure the stable working of a vacuum pump for exhausting an unreacted gaseous starting material and reaction by-product gas from an evacuating treating chamber, furthermore to efficiently recover reaction by-products, to effectively utilize resources and to reduce the running cost. This vacuum CVD device has: a treating chamber 10 for executing the film formation of copper by a vacuum CVD method, a gaseous starting material feeding part 12 for feeding an organic copper compound such as Cu (I) hfacTMVS as a gaseous starting material to this treating chamber 10; and an evacuating part 14 for evacuating the treating chamber 10. The evacuating part 14 is composed of: a vacuum pump 26 and a high temperature trapping device 28 and a low temperature trapping device 30 respectively provided at the front side and rear side. In the high temperature trapping device 28, unreacted Cu (I) hfacTMVS contained in the exhaust gas from the treating chamber 10 is decomposed, and metallic copper is trapped, and, in the low temperature trapping device 30, Cu (II) (hfac) 2 as a reaction by-product is trapped.
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priorityDate 1999-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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