| abstract |
An inorganic insulation film 103 constituted by SiC is formed on a fluorocarbon film 102 utilizing chemical vapor deposition in which SiF4 and C2H4 are used as source gases. By means of using SiF4 and C2H4 not containing hydrogen (H) as source gases, the phenomenon of capturing H into the inorganic insulation film 103 to form a hard mask 113 is prohibited. As such, the H that diffuses outwardly from the inorganic insulation film 103 is coupled with the fluorine (F) in the fluorocarbon film 102 to form HF. The HF prohibits decay of the inorganic insulation film 103. Therefore, deterioration of the bonding between the hard mask 113 constituted by the inorganic insulation film 103 and the other layer, such as the fluorocarbon film 102, can be prohibited. |