| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
1999-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5baa02435b13dd91e6843996ea6e24c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebb709489b9886ddaf665d596b10b673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d74b0bd8e0cc2d21a2de83b66802e4f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cff1c0daee5f719830bf45ea8770843c |
| publicationDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-460748-B |
| titleOfInvention |
Capacitor and method for fabricating the same |
| abstract |
A capacitor includes lower electrode, capacitive insulating film, upper electrode and passivation film that are formed in this order on a substrate. The capacitive insulating film is made of an insulating metal oxide, the metal oxide being a ferroelectric or a dielectric with a high relative dielectric constant. At least one contact hole is formed in the passivation film to connect the lower electrode to an interconnect for the lower electrode or the upper electrode to an interconnect for the upper electrode. The opening area of the contact hole is equal to or smaller than 5 μm<SP>2</SP>. |
| priorityDate |
1998-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |