| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-974
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
1998-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42a76f775b17ae31c0e2c0930603fa9f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f7d9221eaba28b350760bcde3c8d8a2 |
| publicationDate |
2001-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-460617-B |
| titleOfInvention |
Method for removing carbon contamination on surface of semiconductor substrate |
| abstract |
A method for removing carbon contamination on the surface of a semiconductor substrate is disclosed as follows: a sacrificial oxide layer is formed by using dichloro-ethylene and oxygen at a high temperature on the semiconductor substrate to react with the carbon contamination on the surface of the semiconductor substrate, and then diluted hydrogen fluoride is used as an etchant to remove the sacrificial oxide layer. Therefore, the carbon contamination on the surface of the wafer can be removed and the desired cleanness for wafer surface can be achieved. By the present invention, good quality of the oxide layer formed subsequently can be obtained and a required oxide thickness for process can be done. |
| priorityDate |
1998-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |