| abstract |
The present invention relates to a cross-linker for photoresist compositions which is suitable for a photolithography process using KrF (248 nm), ArF (193 nm), E-beam, ion beam or EUV light sources. Preferred cross-linkers, according to the present invention, comprise a copolymer of (i) a compound represented by following chemical formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. Formula 1, wherein, R1 and R2 individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-C10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branch C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; and R3 represents hydrogen or methyl. |