| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76858 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2000-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_635dcd00964e8c25a799952a88287e39 |
| publicationDate |
2001-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-457558-B |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
On a first interlayer insulating film 41, a second wiring layer 34 comprising a plurality of wirings 35 with concave portions 30 between adjacent ones of the wirings 35, is superposed. A second interlayer insulting film 43 formed of materials such as CF film is superposed on the wiring layer 34 by using film material with bad filling characteristics, wherein gasses that are used to produce the film producing material with bad filling characteristics include C6F6 gas, for example, and ionizing the gas into plasma allows the CF film to be formed on the wiring layer 34 while inhibiting the CF film from filling the concave portions 30. In this way, air gaps 36 are defined in shapes similar to those of the concave portions 30 between the wirings 35. The semiconductor device manufactured in such a manner can avoid reducing its mechanical strength while capacities between the wirings are decreased. |
| priorityDate |
1999-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |