http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-455956-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
filingDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bea6c8888cf85a8286b70640420368b |
publicationDate | 2001-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-455956-B |
titleOfInvention | Barrier layer used in bonding pad of Cu chip |
abstract | There is provided a method of barrier layer used in the bonding pad of Cu chip, wherein the barrier layer is located between the bonding pad and the metal cap. In the conventional skill, a reliability problem is encountered between the bonding pad and the metal cap. The present invention provides a method for solving the problem, which comprises forming an interlayer dielectric on the integrated circuit structure, wherein the interlayer dielectric includes a metal bonding pad; next, sequentially forming a barrier layer and a passivation layer on the interlayer dielectric and the metal bonding pad; after transferring the pattern of the barrier layer and the bonding pad layer, forming a passivation layer on the interlayer dielectric and the metal passivation layer; and forming a bonding pad opening after transferring the passivation layer pattern. In the present invention, the sequence of forming the passivation layer and the barrier layer can be exchanged. |
priorityDate | 1999-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 50.