http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-452971-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f063b8222ec3c8e746a415e7f364473 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ad8a37a24718df64d141eb0dd1a0372 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1999-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8744e293d6e22c5b9e42062b7b75e1e6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea602b269c49638337845968e1187529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6a237f1efa443743e6e3fad60f2949f |
| publicationDate | 2001-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-452971-B |
| titleOfInvention | Manufacturing method of bottle-shaped deep trench |
| abstract | This invention provides the manufacture method for bottle-shaped deep trench in a semiconductor substrate, which consists of: proceeding a first etch step using hydrogen bromide, nitrogen trifluoride as plasma gas composition to remove native oxide on the semiconductor substrate; proceeding a second etch step using hydrogen bromide, nitrogen trifluoride and pre-mixed helium/oxygen as plasma gas composition to form a neck profile in the semiconductor substrate, in which the flow rate of hydrogen bromide and nitrogen trifluoride used in the second etch step is greater than that of the first etch step; proceeding a third etch step using hydrogen bromide, nitrogen trifluoride pre-mixed helium/oxygen and chlorine as plasma gas composition to etch the semiconductor substrate underneath the neck profile to form a bottom profile and thus complete the bottle-shaped deep trench structure, in which the flow rate of hydrogen bromide, nitrogen trifluoride and pre-mixed helium/oxygen used in the third etch step is greater than that of the second etch step. The inventive method can increase depth and width of the bottle-shaped deep trench and thus the surface area of the bottle-shaped deep trench increases. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113972135-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8143175-B2 |
| priorityDate | 1999-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.