| abstract |
The semiconductor device of the present invention comprises: a semiconductor substrate, and a wiring pad formed on the semiconductor substrate, and a burr metal layer formed on the wiring pad, the Ag3Sn intermetallic compound formed on the burr metal layer, and the bulged electrode made of low melting point metal on the Ag3Sn intermetallic compound. Furthermore, the manufacturing method of the present invention for semiconductor device includes the following steps: forming wiring pad on the semiconductor substrate; forming burr metal layer on the wiring pad; forming Ag3Sn intermetallic compound on the burr metal layer; and forming the bulged electrode made of low melting point metal on the Ag3Sn intermetallic compound layer; and, forming Ag3Sn intermetallic compound around the interface between the metal layer containing Ag and the low melting metal layer containing Sn. Therefore, the invention can use the solder without Pb to get the semiconductor device with high reliability. |