| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-13629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136286
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
1999-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4757345c50eab35be43e4c8ff4550f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44aca752ddbdc1e2ef342190e6fed554 |
| publicationDate |
2001-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-452860-B |
| titleOfInvention |
Wiring, thin-film transistor substrate with the wiring, method of manufacture thereof, and liquid crystal display device |
| abstract |
The present invention relates to a wiring using low-resistance Cu as a material for forming an electrode or wiring, TFT (thin film transistor) substrate using the same, manufacturing method of the TFT substrate, and LCD (liquid crystal display). The features in the present invention are: a gate electrode (wiring) (40) having a Cu layer (40a) surrounded by a coating film (40b) made of titanium or titanium oxide; a TFT substrate (31) comprising the gate electrode (wiring) (40) and a LCD comprising a pair of opposing substrates, wherein a TFT substrate (31) is disposed at one of the pair of opposing substrates. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9658506-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I622843-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10983407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10539845-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101726950-B |
| priorityDate |
1998-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |