http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-451400-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2000-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7e228e8dbbd794c8927fe182f30ddb55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe9333d89954b24f4f8b8a3276824905
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a13aec7cf9b11902f0b80f2229e9167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff57f118e1cb8e85e147e00d1ac2536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b43c8b669dbad803180af26cd075097
publicationDate 2001-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-451400-B
titleOfInvention Shallow trench isolation process with silicon nitride liner
abstract For the void defects usually occurred in the shallow trench isolation process that uses silicon nitride liner, an ultra high temperature annealing process set between the wet dipping step of silicon nitride cap and the wet dipping step of pad oxide-layer is proposed in the present invention. In general, the temperature is higher than 1100 DEG C such that the isolating oxide layer, particularly the high-density plasma oxide layer or low-pressure tetra-ethyl-ortho-silicate, located on the top end of shallow trench is made to flow so as to fill into the fine and deep voids of the silicon nitride liner generated due to the partial etching. In this way, a flat surface can be generated on the top end of shallow trench such that the void defects can be avoided. Additionally, the quality of shallow trench isolation process can be increased.
priorityDate 2000-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6356
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419555680
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559532
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419546674
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6327453
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5462311
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6517
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559585
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID426099028
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24404

Total number of triples: 27.