| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0338 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
1998-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9d7e85ad49b27d1703be6272261196e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7564aa4ce481ff7b08e2a285579922a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f0dcbdd9afd167c51d8234f4724a0d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2646499a313192016577e1d3582dccd7 |
| publicationDate |
2001-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-449799-B |
| titleOfInvention |
Method of manufacturing a semiconductor device having a fine pattern, and semiconductor device manufactured thereby |
| abstract |
This invention describes a method of stably manufacturing a fine resist pattern narrower than the wavelength of exposing light from a stepper. In the method, a resist pattern is formed on a semiconductor substrate through the use of an acid catalyst chemically-amplified photoresist, and an organic film which includes an acid or which produces an acid on exposure to light is formed on the surface of the semiconductor substrate including the resist pattern. The organic film is then subjected to a heat treatment to diffuse the acid. The surface layer of the resist pattern is made soluble in an alkaline developer, and the surface layer of the resist pattern is removed through use of the alkaline developer. As a result, a fine resist pattern is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109313395-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I662360-B |
| priorityDate |
1998-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |