http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-448481-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d720838a9a69d1910b8546e9e2b9440 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c56a0a8795ddf2d93acf4d8e1cf12f4 |
| publicationDate | 2001-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-448481-B |
| titleOfInvention | Method for drying semiconductor wafer |
| abstract | This invention is about the method for drying semiconductor wafer, in which several wafer racks laid with plural wafers are set up inside the drying tank. When the tank lid is closed, the wafer is linked to leave the positioning tank of wafer rack so as to decrease the contact area of wafer with the wafer rack. The inert nitrogen gas (N2) is spurted in from the upper side of the drying tank and then pure water is poured into the drying tank stated above. After that, through the use of constant-speed drainage apparatus, water surface inside the drying tank is made to descend in a constant speed by using water level difference. When pure water is slowly and linearly descended in a constant speed, gasified isopropyl alcohol (IPA) which is generated by gasified IPA apparatus, is simultaneously spurted out through the injection row preset at the drying tank lid to distribute the space without pure water and uniformly adsorb on wafer surface. By decreasing the water tension after the interface between gasified IPA gas and water is dissolved, water on the wafer surface can be efficiently removed by using the cohesion force of pure water. High-speed drainage apparatus can be used to start up the high-speed drainage valve installed under the drying tank when the liquid surface of pure water is lower than the lower end edge of wafer in order to quickly drain away the remained pure water. Hot inertia nitrogen gas (N2) passing through the heat exchanger is spurted out through the injection row preset at the drying tank to align and spurt toward the groove of wafer rack such that the trace amount of IPA gas adsorbed on wafer is vaporized and the residual water inside the groove of wafer rack is dried. The principle used is that water tension is decreased after the interface between gasified IPA gas and water is dissolved, therefore water on the surface of wafer or wafer rack can be effectively removed. Thus, the present invention provides a method that is static, damage free, contamination free, used safely, and capable of drying in a short time. Additionally, because it is not necessary to move wafer and pure water during the drying process, wafer damage can be avoided. Furthermore, it is not necessary to heat IPA and the gasified quantity of IPA is extremely small such that damage and danger will not be generated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113539900-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101957124-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113539900-A |
| priorityDate | 2000-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.