http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-447120-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1430663e181a8ca0dadf3971baeb2de5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11fca828133ac8f1aa6dd9d60c522a48 |
| publicationDate | 2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-447120-B |
| titleOfInvention | Method for making capacitor including a plasma cleaning step |
| abstract | The present invention relates to a method for forming a capacitor, which comprises an oxygen plasma cleaning step for treating the oxides on the surface of a metal electrode and a dielectric layer. The cleaning step can be an oxygen plasma method, or a plasma method using a mixture gas of oxygen (O2) and tetrafluoro-methane (CF4). This method reduces the formation of a native oxidation layer or a metal oxidation layer for thereby reducing a leakage current and obtaining a stable voltage coefficient. |
| priorityDate | 2000-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.