| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
1999-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82dfeccc13b257ca3a67e30d346a537e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29215823fc9a6502911de7cd1aec596c |
| publicationDate |
2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-447043-B |
| titleOfInvention |
Method of fabricating semiconductor device |
| abstract |
A method of fabricating a semiconductor device comprises the steps of: forming a conductive layer made of copper or its alloy as a principal component on a semiconductor substrate; forming an insulating layer on the conductive layer; forming an opening in the insulating layer with use of a resist pattern as a mask so as to reach the conductive layer; subjecting the resulting semiconductor substrate to an oxidizing/ashing treatment in an oxygen plasma atmosphere to remove the resist pattern and to oxidize at least an inner surface of the opening; and washing at least the inner surface of the opening with a solution containing citric acid as a principal component at normal temperature. |
| priorityDate |
1998-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |