http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-446987-B

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
filingDate 2000-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e3d75956f253535e256b78af5384726
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7688fb1b19d6f756c43294b2e317f9f5
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publicationDate 2001-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-446987-B
titleOfInvention Method and apparatus for low energy ion implantation
abstract An ion implanter for low energy ion implantation includes an ion beam generator, a holder for supporting a workpiece, such as a semiconductor wafer, and a voltage source electrically connected to the workpiece. The ion beam generator includes an ion source for generating ions and an extraction electrode having an extraction voltage applied thereto for accelerating the ions to form an ion beam. The voltage source applies to the workpiece a bias voltage that is of opposite polarity and smaller magnitude than the extraction voltage. The ions in the ion beam are implanted in the workpiece with an energy that is a function of the difference between the extraction voltage and the bias voltage.
priorityDate 1998-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.