http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-444348-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab6bf6797998c9391361fcb51968ad60 |
| publicationDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-444348-B |
| titleOfInvention | Improved dual damascene process |
| abstract | There is provided a process for forming dual damascene opening filled with metal in the composite insulator layer. The process is characterized in using selective reaction ion etching method to form an opening having a larger diameter in the silicon oxide located in the upper layer and an opening having a smaller diameter in the silicon oxide located in the lower layer. The small-area silicon nitride protrusion structure located at the composite insulator layer is used as stop layer in the selective reaction ion etching. In comparison with the large-area silicon nitride stop layer, the small-area silicon nitride protrusion structure can provide a smaller composite insulator layer capacitor. |
| priorityDate | 2000-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.