| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f481982f9992cbb527a6d31589832958 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2000-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e55027c14fededdd523c751ca51833d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79b7ded4a4873b2ad3037942344449d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_096341d2a18644028a1056abbc0d4249 |
| publicationDate |
2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-444326-B |
| titleOfInvention |
Method of making a graded grown, high quality oxide layer for a semiconductor device |
| abstract |
A method for making an oxide layer on a silicon substrate produces an oxide layer including graded portions with greatly reduced stress. The method preferably comprises the steps of: growing a first oxide portion by upwardly ramping the silicon substrate to a first temperature lower than a SiO2 viscoelastic temperature, and exposing the silicon substrate to an oxidizing ambient at the first temperature and for a first time period; and growing a second oxide portion between the first oxide portion and the silicon substrate by exposing the silicon substrate to an oxidizing ambient at a second temperature higher than the SiO2 viscoelastic temperature for a second time period. The second oxide portion may have a thickness in a range of about 25 to 50% of a total thickness of the graded oxide layer. The step of upwardly ramping preferably comprises upwardly ramping the temperature at a relatively high ramping rate to reduce any oxide formed during the upward ramping. |
| priorityDate |
1999-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |