http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-444256-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02K7-116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02K7-1807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02N11-002 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
filingDate | 2000-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3b2ff3d95c35beaaf59eb5b60500971 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_150edbf77e6b0a34fe740077706ea561 |
publicationDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-444256-B |
titleOfInvention | Process for fabricating semiconductor device having reliable conductive layer and interlayer insulating layer |
abstract | A lower conductive line consists of a barrier metal layer (6) of tantalum or tantalum nitride conformably formed in a groove (5) in an inter-layered insulating layer (4) and a copper layer (8) filling a hollow space defined by the barrier metal layer (6), wherein a first chemical mechanical polishing is carried out for the copper (7) until the barrier metal layer (6) is exposed and, thereafter, a second chemical mechanical polishing is carried out for the barrier metal layer (6) and an upper portion of the inter-layered insulating layer (4) until the remaining inter-layered insulating layer becomes coplanar with or lower than the copper layer left in the groove so that the copper layer (8) and the inter-layered insulating layer (4) are prevented from over-polishing. |
priorityDate | 1999-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 211.