http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-444245-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 1999-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb64be3bb6cd728819acf44bf67f48b2 |
| publicationDate | 2001-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-444245-B |
| titleOfInvention | Process for fabricating semiconductor device improved in step coverage without sacrifice of reliability of lower aluminum line |
| abstract | A lower aluminum line (22) is exposed to a via-hole (24) formed in an inter-level insulating layer (23), and an outgassing is carried out before deposition for an upper aluminum line (30) connected through the via-hole (24) to the lower aluminum line (22), wherein the outgassing is carried out at a substrate temperature equal to or less than the maximum substrate temperature in the formation of the inter-level insulating layer (23) so that a hillock and a whisker due to the thermal stress do not take place in the lower aluminum line (22). |
| priorityDate | 1998-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.