| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2d32a1324eb3a240649ffee8d475d63 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5258 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate |
1998-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd5a831a417f4bfbf42a9ce7c37a7072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f204864cb1f7bd4c9fc0309311cc86fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_746b32c9d6a5b039fb599f484f2793dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f2ab67672ee3b936023ff2204dac925
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_324a9422b78347c8f167746af85e2b45 |
| publicationDate |
2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-442923-B |
| titleOfInvention |
Manufacturing method of DRAM comprising redundancy circuit region |
| abstract |
The present invention provides a manufacturing method of DRAM comprising redundancy circuit region, which is suitable for DRAM with crown capacitor, and which will prevent the residual oxide insulating layer on the fuse of the redundancy circuit from becoming too thick, so that the fuse is easier to be blew off by laser. |
| priorityDate |
1998-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |