http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-442911-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53214
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2000-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55a9d4f76870986d3d00c8245057eae6
publicationDate 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-442911-B
titleOfInvention Semiconductor device
abstract A semiconductor device of the present invention comprises a first interconnect and a second interconnect formed from aluminum or aluminum alloy at a different layer to the first interconnect and being connected to the first interconnect via metal not including aluminum, and a hole is provided at the second interconnect. As a result, aluminum loss at ends of the interconnect can be suppressed.
priorityDate 1999-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 23.