http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-442909-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2beb5721a0f6cda9997c70a8d59d4409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate | 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-442909-B |
| titleOfInvention | Manufacturing method of copper dual damascene interconnect |
| abstract | The present invention provides a manufacturing method of copper dual damascene interconnect, wherein a copper metal layer is deposited again on the surface having recessed position or damaged copper dual damascene structure to fill into said recessed position, then proceed the chemical mechanical polishing to obtain the copper dual damascene interconnect with planar surface, which can eliminate the recess or damage resulted from the slurry processing or the etching of following cleaning solution . |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11756880-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113169151-A |
| priorityDate | 1999-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.