| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 |
| filingDate |
2000-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_024c6103e59bcd98ab3dff9039668c49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cb3e020ade2310c7e920fa9f2328488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_70190b5a5fb9ff3ba85ff62c810a637b |
| publicationDate |
2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-442903-B |
| titleOfInvention |
Method for increasing the filling trench capability of dielectric layer |
| abstract |
This invention is about a kind of method for increasing the filling trench capability of dielectric layer and includes the followings. At first, a substrate with conducting structure is provided. A dielectric layer is deposited on the substrate by using high-density plasma chemical vapor deposition method. Several stages are included in this deposition. At the first stage, the reactive gas and inert gas are introduced so as to conduct deposition and sputtering at the same time. At the second stage, pump is used to pump out the reactive gas or to guide the reactive gas out from the reaction chamber such that only the sputtering composition gas is left, such as argon gas or oxygen gas. Therefore, the dielectric material deposited on the top corner of conducting structure is removed. At the third stage, the introduction of reactive gas is restored until the gap in between the conducting structures is completely filled up. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110958773-A |
| priorityDate |
2000-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |