http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-442894-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1999-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afb77215276e4b12c94ddfa2ad79b092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84136b1be68d4beb047b0da598314bdd |
| publicationDate | 2001-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-442894-B |
| titleOfInvention | Semiconductor integrated circuit capacitor and method of fabricating same |
| abstract | A semiconductor integrated circuit capacitor is provided which includes an insulating substrate and a lower electrode disposed on a predetermined part of the insulating substrate. The capacitor also includes an interlevel insulating layer disposed on the insulating substrate and on the lower electrode, and a via hole having sidewalls, whereby the via hole passes through the interlevel insulating layer and exposes a predetermined surface of the lower electrode. The capacitor also includes a spacer disposed on the sidewalls of the via hole, and a dielectric layer disposed on: (i) a bottom surface of the via hole adjacent to the predetermined surface of the lower electrode; (ii) a predetermined part of the insulating layer; and (iii) the spacer. The capacitor also includes an upper electrode disposed on a predetermined part of the interlevel insulating layer and disposed on the dielectric layer. A method of making the semiconductor integrated circuit capacitor also is disclosed. |
| priorityDate | 1998-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.