http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-441025-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2000-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8645d0613fd6698494fd843e2b8ecf13 |
| publicationDate | 2001-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-441025-B |
| titleOfInvention | Formation method of inter-metal dielectric layer |
| abstract | A formation method of inter-metal dielectric layer only uses SiF4 and O2 to deposit a fluorosilicate glass layer with a low dielectric constant. The method comprises providing a substrate having semiconductor devices; placing the substrate in a reaction device; directing SiF4 and O2 into the reaction device for being used as reaction gas; regulating the gas flow to provide a stable pressure in the reaction device; performing a chemical vapor deposition procedure in the reaction device to form a fluorosilicate glass layer on the substrate. |
| priorityDate | 2000-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.