http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-439296-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
filingDate 1999-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7149279cb63d6ff34409ec00899de3b9
publicationDate 2001-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-439296-B
titleOfInvention Thin-film transistor structure with high aperture and high storage capacitance and the process of the same
abstract The present invention comprises: a transparent conductive pattern located on the transparent substrate; a dielectric layer located on the transparent conductive pattern and the transparent substrate; a gate electrode located on the dielectric layer; a common line located on the dielectric layer and part of the common line is located on the upper region of the transparent conductive pattern to form a storage capacitance; an insulation layer located on the dielectric layer, the gate electrode and the common line; a semiconductor layer located on the insulation layer and on the upper region of the gate electrode; a doped semiconductor layer located on the semiconductor layer for the source/drain of the thin-film transistor; a drain electrode connected electrically between the drain and the transparent conductive pattern; a data line connected electrically with the drain and some part of the semiconductor layer being exposed from the source electrode and the data line; a passivation layer formed on the insulation layer, the source electrode, the data line and the portion of the semiconductor layer.
priorityDate 1999-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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