http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-439203-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4243996c423519fc6036779516fa037d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eed53424e9296c9bff330651a16fa0e |
| publicationDate | 2001-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-439203-B |
| titleOfInvention | Manufacturing method of borderless contact of semiconductor device |
| abstract | A manufacturing method of borderless contact uses N2<SP>+</SP> ion implantation step and heating process to react in the device isolation structure and forms the silicon nitride layer. The silicon nitride layer can prevent the device isolation structure from being etched through and causing leakage current. In addition, the stress caused by adding one silicon nitride covering layer, or the narrow process window during ion implantation can be avoided. |
| priorityDate | 1999-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.