| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48453
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05559
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48699
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48799
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-4807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10157
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01018
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-05042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-3025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13099
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0001 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
1998-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9409fa26f955248063b889e0d30e88f6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9269a9cb0131998e9b7faeac1c2f95c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a7027af345877d8b06fbf4d8f7fb927 |
| publicationDate |
2001-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-436930-B |
| titleOfInvention |
Dual damascene with bond pads |
| abstract |
An improved method of forming a bond pad (222) by performing a dual damascene etch through a layer stack (200) disposed above a substrate (204) using self aligned vias (216). The layer (200) stack includes an underlying conductive layer (208) and an insulating layer (202) disposed above the underlying conductive layer (208). The method includes the following operative steps. At least a via hole (216) is formed in the insulating layer (202) positioned over the underlying device layer (208) and extending to the underlying device layer (208) at the bottom of the via hole. A bond pad trench (218) is then formed that takes the form of the desired bond pad (222). A layer of conductive material (220) is then placed over the insulating layer (202) substantially simultaneously filling the via hole (216) and the bond pad trench (218). The bond pad (222) is then formed by removing the layer of conductive material (220) sufficient to expose the upper surface of the insulating layer (210). |
| priorityDate |
1997-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |