http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-434810-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c64f08e952970cd39508602c2498b325 |
| publicationDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-434810-B |
| titleOfInvention | Dual damascene process |
| abstract | A method of fabricating dual damascene structure is revealed hereby. The present method includes providing a substrate and deposit a conductive layer. Then form the first photoresist layer and transfer the opening pattern to the first photoresist layer to form a via photoresist layer. Then deposit the first dielectric layer on the substrate whose height is lower than the via photoresist layer. Similarly, deposit the second photoresist layer on the first dielectric layer and the first photoresist layer, and transfer the line pattern to the second photoresist layer to form a line photoresist layer. Then deposit a second dielectric layer on the first photoresist layer whose height is lower than the line photoresist layer. Thereafter, remove the via photoresist layer and line photoresist layer, and deposit the metal layer to the trench and the opening to form the dual damascene structure. |
| priorityDate | 1999-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.