http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-434801-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 1997-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da0da7d1a972a876d3571b64c22a736b |
| publicationDate | 2001-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-434801-B |
| titleOfInvention | Fabrication method of junction separation devices on semiconductor substrate |
| abstract | The present invention is a fabrication method of junction separation devices on semiconductor substrate, which combines the fabrication method of neuron beam and gadolinium (Gd) photomask to convert the p-type substrate into N-type locally (vertically from top to the bottom of substrate), so junction separation patterning can be done on the substrate. |
| priorityDate | 1997-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.