http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-432677-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a83784bb19e721c794429e59286c1d5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c98bd72be60d0da8f51fc72693e7d30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7108fba0f5865394e32da2a65216ca84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33ef8a291907a5cef530d4606a732ea6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebdf68386f3e877a1f1d152f2a3857f3 |
| publicationDate | 2001-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-432677-B |
| titleOfInvention | Trench-capacitor with isolation-collar and its production method |
| abstract | This invention designs a trench-capacitor (160), which can be used in a memory-cells (100). Said trench-capacitor (160) is formed in a substrate (101) and is composed of: a trench (108) with an upper region (109) and a lower region (111); an isolation-collar (168), which is formed in the upper region (109) of a trench (108); a buried tub (170), which is formed from the lower region (111) of the trench (108); a buried plate (165), acted as a capacitor outer-electrode, which is formed around the lower region (111) of the trench (108); a dielectric layer (164), acted as a capacitor-dielectric to cover the lower region (111) of the trench (108) and of the isolation-collar (168); a conductive trench-filling (161), which is filled in the trench (108) and forms the inner capacitor-electrode; a buried contact (250), which is formed in the substrate (101); wherein the buried contact (250) is formed through implantation, plasma-doping and/or gas-phase-doping. Preferably a tunnel-layer (205) composed of oxide-, nitride- or oxynitride is formed on the boundary (201) of the buried contacts (250). |
| priorityDate | 1998-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.