http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-430898-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
| filingDate | 1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6513aa7bebb8e85a3b04ae2d6c703e3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc749fd1e9227ba053c8a411e7296d7c |
| publicationDate | 2001-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-430898-B |
| titleOfInvention | Planarization process |
| abstract | The present invention provides a planarization process capable of eliminating the micro-scratched defect caused by chemical mechanical polishing process, so as to increase the degree of planarization. The method comprises the steps of: providing a semiconductor substrate having devices; depositing silicon rich oxide layer on the semiconductor substrate; covering a spin-on glass layer on the silicon rich oxide layer, curing the spin-on glass, and performing an ion implantation process for increasing density; covering a oxide layer; using chemical mechanical polishing process to polish the oxide layer; covering another spin-on glass layer, curing the spin-on glass, and covering a cap oxide layer to adjust the height of the dielectric layer. The present invention not only solves the problem of micro-scratched defect in the conventional planarization process but also solves the problem of bridge effect. |
| priorityDate | 1998-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 24.