http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-426752-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C26-00 |
| filingDate | 1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f7b115b1ba11103832141aaf27d99c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_071194311e617483f17a0ff3e25de5d8 |
| publicationDate | 2001-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-426752-B |
| titleOfInvention | Deposition process for forming void-free dielectric layer |
| abstract | A deposition process for forming a void-free dielectric layer is described. A first dielectric layer is formed over a conductor pattern. A second dielectric layer is formed to conform to the first dielectric layer. A third dielectric layer is formed to cover the second dielectric layer. The first, second, and third dielectric layers can be formed by high density plasma deposition, atmospheric pressure deposition, and plasma enhanced deposition, respectively. The second dielectric layer can alternatively be formed by plasma enhanced deposition. |
| priorityDate | 1999-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.