http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-425671-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 1999-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f108e08230ffc9926790db75dce8b14e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0952d12adbe300b28050cab090413d1d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e51de0edebbd7186dbd93a458646064b |
| publicationDate | 2001-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-425671-B |
| titleOfInvention | Method of manufacturing ferroelectric memory device |
| abstract | A method of manufacturing a ferroelectric memory device which can improve the adhesion between an intermediate insulating layer and a lower electrode and the surface roughness of the lower electrode, is disclosed. According to the present invent, a titanium layer and a first platinum layer are sequentially formed on a semiconductor substrate on which a first intermediate insulating layer is formed. The substrate is then thermal-treated under oxygen atmosphere to transform the titanium layer and the first platinum layer into a titanium oxide layer containing platinum. Next, a second platinum layer for a lower electrode, a ferroelectric thin film and a third platinum layer for an upper electrode are formed on the titanium oxide layer containing platinum, in sequence. The third platinum layer is then etched to form the upper electrode and the ferroelectric thin film, the second platinum layer and the titanium oxide layer containing platinum are etched to form a capacitor. |
| priorityDate | 1998-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.