http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-425667-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_412d6314f27b0a29dfb0cacfa085fa1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f2bbb834f244366d5a31fea93ca387c |
| publicationDate | 2001-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-425667-B |
| titleOfInvention | Selectivity reduction method to different pattern densities for inter-metal dielectric during planarization processing |
| abstract | The present invention discloses a selectivity reduction method to different pattern densities for inter-metal dielectric during planarization processing which is characterized by forming a high density plasma CVD layer under the inter-metal dielectric layer for planarization, or on its surface, or between two layers of inter-metal dielectric as a part of the inter-metal dielectric so as to overcome the polishing selectivity difference for the chemical mechanical polishing due to the different pattern densities. |
| priorityDate | 1999-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.