| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44f82521bd7b49adba4be2e3e4f3b66a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D3-3947
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D11-0047
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-08 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D3-39
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
1999-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_546e5cdf714fc4390325c7f54c4ef7ba |
| publicationDate |
2001-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-424275-B |
| titleOfInvention |
Cleaning method for semiconductor substrate and cleaning solution |
| abstract |
The present invention relates to a cleaning solution which can reliably remove the platinum group metal (e.g. Pt or Ir) contaminants adhering on the silicon-based insulating film (e.g. silicon oxide film) formed on a semiconductor substrate and further can prevent the readhesion of the removed contaminants, as well as to a cleaning method using said cleaning solution. Since the cleaning solution consists of HPFM or SPFM which is a mixture of a hydrochloric acid-hydrogen peroxide (HPM) or sulfuric acid-hydrogen peroxide (SPM) solution with a very small amount of hydrofluoric acid, the contaminants adhering on the silicon-based insulating film can be reduced to a level lower than 1*10<10> atoms/cm<2>. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114456884-A |
| priorityDate |
1998-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |