http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-423148-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 |
| filingDate | 1999-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c9c1fd737f6551b89f6ebad353ca298 |
| publicationDate | 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-423148-B |
| titleOfInvention | Manufacturing method of dual crown-type rough poly-silicon DRAM capacitor |
| abstract | First, form the first dielectric layer upon the substrate and then the second dielectric layer and the first conductive layer. Remove part of the first conductive and the second dielectric layers and define openings in them. Second, form the second conductive layer covering the substrate and sidewall structure upon the side wall of the second conductive layer in the opening. Furthermore, remove the second conductive layer not covered by the sidewall and use the remained second conductive layer as a mask to remove the sidewall and partial first dielectric layer and to define contact holes. Third, form the third conductive layer covering the substrate and then define a pattered layer on the third conductive layer. Remove the third and first conductive layers not covered by the patterned layer. Forth, form a conductive sidewall upon the side walls of the patterned, third conductive and first conductive layers and remove the patterned and second dielectric layers to leave the storage capacitor. Fifth, form the third dielectric layer upon the substrate. Finally form the forth conductive layer on the third dielectric layer to complete the capacitor formation. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8241987-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8318578-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7618874-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7696056-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623725-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964471-B2 |
| priorityDate | 1999-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.