http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-423110-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3beb3a0245c9d13cec7c24eaa155fa23 |
| publicationDate | 2001-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-423110-B |
| titleOfInvention | Optimized dry etching process by using oxygen-included plasma to form small aperture contact window |
| abstract | This invention provides the anisotropic reactive ion etching (RIE) process to form small aperture self-aligned contact (SAC) window on the insulation layer of the MOSFET device and use a large area testing point to perform the final-point test. The characteristic of this kind of RIE process is that the atmosphere of RIE includes oxygen plasma so as to make the polymer amount deposited in the small aperture SAC window the same as that deposited on the large area testing point when performing RIE process of the small aperture SAC window. Therefore, the results can be very correct when using optical ellipsometry process on the large area testing point to perform the RIE process monitor. |
| priorityDate | 1997-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.