| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2e0a5e2fe9dd5e8486bdc3d941efd80a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08 |
| filingDate |
1998-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b984a3206b137a95a6b3d0fe0c81ad13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d470e452ceed7b370cce13325848a2ab
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c8fe5de674b5d9ea155f898a049b6fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ba91f37a30c2da6d97ac98d0e019f2cd |
| publicationDate |
2001-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-419399-B |
| titleOfInvention |
Post-lapping cleaning process for silicon wafers |
| abstract |
A process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped. The process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising citric acid into which sonic energy is being directed to remove metallic contaminants which may be present on the surface of the wafer. After being immersed in the citric acid bath, the wafer is contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer. The wafer is then immersed in an aqueous bath comprising an alkaline component and a surfactant, and into which sonic energy is being directed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I755496-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11177125-B2 |
| priorityDate |
1997-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |