http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-418547-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2231 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-156 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2081 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04252 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| filingDate | 1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_141066f837247e0e10e70ea26ce1d6f3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cc4cf0cbe6c4be063e3977c83094b12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1ecfdd328d257c15ea371de345b450a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06eebd8ec0dd464cf3af6052cdad2cbe |
| publicationDate | 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-418547-B |
| titleOfInvention | Manufacturing method of ridge waveguide semiconductor light emitting device |
| abstract | This invention is about the manufacturing method of ridge optical waveguide semiconductor light emitting device, in which heavily doped semiconductor is used as the interface between metal and another semiconductor epitaxy layer so as to prevent current from flowing outside of the ridge region. After forming the basic structure of ridge optical waveguide during the manufacturing process of semiconductor light emitting device, a layer of heavily doped semiconductor of another type is first formed on the ridge optical waveguide and followed by forming the metal layer for electrical conduction and connection. For the ridge optical waveguide, since the carrier concentration on the outermost surface is higher than that of the inner side surface, current mainly flows through the interface between the heavily doped semiconductor layer and the top end of ridge optical waveguide. Therefore, current will not flow through the interface between heavily doped semiconductor layer and the inner side epitaxy layer with lower carrier concentration so as to obtain the effect of controlling current flowing through only the top end of ridge optical waveguide. |
| priorityDate | 1998-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.