http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-418504-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457f4050fee9643a57e58f4d5fd6179b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ebe00cb1530d0c195c8336a23ace567 |
| publicationDate | 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-418504-B |
| titleOfInvention | Method of reducing pin holes in a silicon nitride passivation layer |
| abstract | The present invention uses a pre-treatment to remove the organic metal on an interconnect. The reaction gas is NH3 and N2O. The gas pressure of the process is about 2.5 torrs. The power of plasma is about 100 watts. The clearance of the susceptors is about 450 mils. The flowrates of the gases NH3 and N2O, separately, are 100 sccm and 1600 sccm. A thin layer of oxide is formed on the interconnect. The gas pressure of the process is about 2.5 torrs. The power of deposition is about 240 watts within the range of power frequency. The clearance of the susceptors is about 430 mils. The flowrate of the reaction gas N2O is 1600 sccm. The flowrate of the reaction gas SiH4 is 90 sccm. A silicon nitride layer is formed on the oxide layer as a passivation layer by a chemical vapor deposition process. The gas pressure of the process is about 3.35 torrs. The power of deposition is about 760 watts. The clearance of the susceptors is about 650 mils. The reaction gases are SiH4 and NH3. Pin holes in the passivation layer can be effectively removed by using the processing parameters in the present process. |
| priorityDate | 1997-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3084099 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419522015 |
Total number of triples: 14.