http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-418503-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 1999-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e282fb02b56e02a4dc772d9c6e06661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba6533c8a29527828f81b9ed78f5fac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eea14342f222b9b1aa83bb03ef4aac9e
publicationDate 2001-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-418503-B
titleOfInvention Method for producing contact of semiconductor chip
abstract The present invention relates to a method for producing a contact on a semiconductor chip. The surface of the semiconductor chip comprises a substrate. The method comprises: sequentially forming an oxynitride (SiOxNy) layer and a predominant silicon oxide layer on the substrate; spin-coating a photoresist layer on the predominant silicon oxide layer; using a predetermined pattern to expose the photoresist layer in which the oxynitride layer is used to reduce the photo reflectivity of the semiconductor chip; performing a photolithography process to remove the photoresist layer of the exposed region in order to form a hole communicating to the surface of the predominant silicon oxide layer on the photoresist layer; performing a first etching process to vertically and downwardly removing the predominant silicon oxide layer beneath the hole until reaching the surface of the oxynitride layer; performing a second etching process to remove the oxynitride layer beneath the hole; and completely removing the photoresist layer.
priorityDate 1999-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.