http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-416152-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d8f8e53f5fab1608fc8de3f154775d0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate | 1998-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2000-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_757d2829ca276d600c747d9d334d5980 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e31c72edc72154c628ec665051ad4709 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dba9430b258a41d0076c084caa90cf9c |
| publicationDate | 2000-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-416152-B |
| titleOfInvention | C-axis oriented thin film ferroelectric transistor memory cell and method of making the same |
| abstract | A method of forming the c-axis FEM cell semiconductor structure includes forming a semiconductor structure having a ferroelectric memory (FEM) gate unit on a substrate of single crystal silicon; forming a conductive channel of a first type for use as a source junction region and a drain junction region; forming a conductive channel of a second type to act as a gate junction region between the source junction region and drain junction region; depositing an FEM gate unit over the gate junction region, including depositing a lower electrode, a c-axis oriented Pb5Ge3O11 FE layer and an upper electrode, wherein the FEM gate unit is sized on the gate junction region such that any edge of the FEM gate unit is a distance ""D"" from the edges of the source junction region and the drain junction region, and depositing an insulating structure about the FEM gate unit. The structure of the c-axis FEM cell semiconductor includes a silicon substrate; a source junction region and a drain junction region located in the substrate; a gate junction region located between the source junction region and the drain junction region; a FEM gate unit including a lower electrode, a c-axis oriented Pb5Ge3O11 FE layer and an upper electrode; wherein the FEM gate unit is sized on the gate junction region such that any edge of said FEM gate unit is a distance ""D"" from the edges of the source junction region and the drain junction region; an insulating layer, having an upper surface, overlying the junction regions, the FEM gate unit and the substrate; and source, drain and gate electrodes. |
| priorityDate | 1998-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 72.