http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-415059-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc905cbef116a1ec61d12125af9427f3 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
filingDate | 1998-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c4391222f6d38c2e05ad0df2d4298eb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94b7a4cf14aa0fa062411c640da08197 |
publicationDate | 2000-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-415059-B |
titleOfInvention | Defining method of dual damascene |
abstract | This invention relates to a defining method of dual damascene, in which a substrate including three layers of isolating structure is provided. The first photoresist layer is formed on the substrate and the pattern of hole is defined through the mask. The silication reaction is performed onto the photoresist in order to raise the depth of focal length and lessen the reflection of substrate. The pattern of hole is formed at the same time. The etching process is performed. The second photoresist layer is then formed and the conductive wire pattern is defined through the use of mask to align the pattern of hole obtained previously. The pattern of hole and the conductive wire pattern are transferred to a top dielectric layer and inside a bottom dielectric layer. Metal is then deposited in the dual damascene structure of the trench of the conductive wire and the contact window. The extra metal is then removed by the chemical mechanical polishing method to prepare for the next semiconductor process. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I446993-B |
priorityDate | 1998-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 54.