| abstract |
The present invention provides a holder (an electrostatic chuck) which is to laminate a ceramic base material while maintaining the same material when an insulation portion is provided on a semiconductor circuit by a gas plasma. It has an excellent plasma resistance and a high dimensional accuracy even when the outer diameter is large. A holder for semiconductor manufacturing equipment according to the present invention is obtained by laminating plural aluminum nitride (AIN) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (AIN) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (AIN), in which the average particle size of an AIN crystal is from 2 to 5 mu m. |