| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0aaaf1fba35e2237ea651206136e877b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
1998-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2000-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad522739f68dd5d39afe46bf7005a5b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dd36678aea23155f382797b6860cae1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65349a70b6e9744f42c20d9f84be5372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e76e8bdc45f60913a67ca1920f0892e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2e68caf697755d4e400d7b66d9557d0 |
| publicationDate |
2000-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-411617-B |
| titleOfInvention |
Forming method for the roughened conductive film and the semiconductor apparatus |
| abstract |
The subject of this invention is to form the same rough surface on the conductive film surface of the semiconductor wafer, in which the roughness degree of the rough surface is completely assured. The amorphous silicon conductive film on the semiconductor wafer is treated with hydrofluoric acid in order to remove the nature oxide film on the amorphous silicon conductive film. The ultra thin oxide film is then formed on the semiconductor wafer. The film for nucleation is formed by using silane gas and followed by the annealing process to generate the roughened surface of the conductive film. The thickness of the ultra thin oxide film is 0.5<ANGSTROM> to 20<ANGSTROM>. In addition, the formation of the ultra thin oxide film is through the aqueous solution of hydrogen peroxide or the cleaning process of an oxidant and so on. |
| priorityDate |
1997-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |